Assistant Professor Shinichiro Takeda
The University of Tokyo, presents: 

Development of Si/CdTe semiconductor Compton cameras for gamma-ray imaging

Our group has been developing a semiconductor Compton camera that combines silicon (Si) and Cadmium Telluride (CdTe) for gamma-ray imaging in astrophysics and medical fields [1].
In the Si/CdTe Compton camera, the events involving the incident gamma-ray being scattered in the Si detectors and absorbed in the CdTe detectors are reconstructed by using kinematics of Compton scattering.

Since the process of Compton scattering is precisely measured thanks to high position resolution and high energy resolution of these semiconductor devices, our camera achieves highest angular resolution among other Compton cameras. This talk includes basic and tips of Compton imaging, experimental verification and applications. We experimentally demonstrated its imaging capability of a few mm resolution and multi-probe simultaneous imaging with living mice [2].

[1] T. Takahashi et al. Proc SPIE 2003
[2] S. Takeda et al. IEEE TNS 2012

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